Experimental and numerical results correlation during extreme use of power MOSFET designed for avalanche functional mode
DUPONT ; COQUERY ; LALLEMAND ; BLANCHARD ; MORELLE ; BLONDEL ; ROULEAU
Type de document
COMMUNICATION AVEC ACTES INTERNATIONAL (ACTI)
Langue
anglais
Auteur
DUPONT ; COQUERY ; LALLEMAND ; BLANCHARD ; MORELLE ; BLONDEL ; ROULEAU
Résumé / Abstract
Cost, weight and size reduction constrained designers of power electronic for micro hybrid vehicle to use power MOSFET under extreme conditions like avalanche mode. This paper shows the influence of the solder voids onto the die temperature distribution of a specifically designed power MOSFET. In the first part of this paper, a methodology is presented to perform fast dynamic temperature measurements during MOSFET avalanche (400A - 80μs). In the second part of the paper, a comparison between experimental results and finite elements electrothermal simulation is shown for power MOSFET operating in high conduction mode (500A - 100ms). Finally the correlated numerical model is used to evaluate the sensitivity to solder voids of the chip temperature distribution.
Editeur
ESREF
