Accelerated Active Ageing Test on SiC JFETs Power Module with Silver Joining Technology for High Temperature Application
DUPONT ; COQUERY ; KRIEGEL ; MELKONYAN
Type de document
COMMUNICATION AVEC ACTES INTERNATIONAL (ACTI)
Langue
anglais
Auteur
DUPONT ; COQUERY ; KRIEGEL ; MELKONYAN
Résumé / Abstract
This paper presents the accelerated active power cycling test (APCT) results on SiC JFETs power module dedicated to operate at high temperature. This study partly focuses on the new chip joining technology (LTJT), which permit to use SiC JFETs transistors at higher temperatures. We present the different die attachments tested with high temperature lead solder and silver sintering joining technologies. Active power cycling results for high junction temperature Tjmax=175°C with "Tj=80°K to perform an evaluation of main damages during active test are carried out and a comparison between lead and silver chip joining technologies is presented.
Source
Microelectronics Reliability, num. 9-11, pp. 1375-1380 p.
Editeur
Elsevier
