Investigation of 1.2 kV Investigation of SiC MOSFETs for Aeronautics Applications
OTHMAN ; LEFEBVRE ; BERKANI ; KHATIR ; IBRAHIM ; BOUZOURENE
Type de document
COMMUNICATION AVEC ACTES INTERNATIONAL (ACTI)
Langue
anglais
Auteur
OTHMAN ; LEFEBVRE ; BERKANI ; KHATIR ; IBRAHIM ; BOUZOURENE
Résumé / Abstract
This paper evaluates robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for medium power aeronautics applications. The first part focuses on switching performances with effects of gate resistance and load current level. The second part focuses on robustness results showing the weakness of the gate under short-circuit test.
