Robustness of 1.2 kV SiC MOSFET devices

OTHMAN ; LEFEBVRE ; BERKANI ; KHATIR ; IBRAHIM ; BOUZOURENE

Type de document
ARTICLE A COMITE DE LECTURE REPERTORIE DANS BDI (ACL)
Langue
anglais
Auteur
OTHMAN ; LEFEBVRE ; BERKANI ; KHATIR ; IBRAHIM ; BOUZOURENE
Résumé / Abstract
This paper provides an evaluation of robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for aircraft applications in medium power range. The paper focuses on robustness results showing the weakness of the gate under short-circuit tests. Observed failures appear at the gate level with effects on the mode of failure depending of the short-circuit duration.
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