New Investigation Possibilities on Forward Biased Power Devices using Cross-Sections
KOCINIEWSKI ; MOUSSODJI ; KHATIR ; BERKANI ; LEFEBVRE ; AZZOPARDI
Type de document
ARTICLE A COMITE DE LECTURE REPERTORIE DANS BDI (ACL)
Langue
anglais
Auteur
KOCINIEWSKI ; MOUSSODJI ; KHATIR ; BERKANI ; LEFEBVRE ; AZZOPARDI
Résumé / Abstract
For the first time, it is demonstrated in this letter that high-power silicon devices [diodes and insulated gate bipolar transistor (IGBTs)] can be forward biased and remains functional after cross sections. Sample preparation is presented, and electrical characterizations of a high-power diode and IGBT (600 V-200 A) have been performed in steady on-state. Infrared thermography on the cross-section surface using a macro-lens with high spatial resolution has allowed characterizing the vertical thermal distribution inside the power diode during forward bias. The impact of this work is that it opens a wide field of investigation in high-power semiconductor device characterization under forward bias.
Source
IEEE Electron Device Letters, num. 4, pp.576-578 p.
Editeur
IEEE / INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS INCORPORATED
