Experimental and numerical investigations on a hard GTO turn-on process
KHATIR ; LALLEMAND
Type de document
COMMUNICATION AVEC ACTES INTERNATIONAL (ACTI)
Langue
anglais
Auteur
KHATIR ; LALLEMAND
Résumé / Abstract
Turn-on phenomena for GTO thyristors, when the voltage between anode and cathode terminals is near zero, are investigated in both experimental and numerical ways. Overvoltage?s may appear during these processes and may be fatal to the device because of the transient dissipated power. A description of this type of turn-on process has been done. Numerical investigations have shown the influence of the transient behaviour of the gate current values and waveforms, the delay time between GTO on-trigger and anode current rising through the GTO and finally the current rate of rise DI/DT. Particularly it is shown that p-base structural parameters have a fundamental influence on the turn-on process.
